IPU09N03LB G
Manufacturer Product Number:

IPU09N03LB G

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPU09N03LB G-DG

Description:

MOSFET N-CH 30V 50A TO251-3
Detailed Description:
N-Channel 30 V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-21

Inventory:

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12803563
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IPU09N03LB G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-21
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU09N

Datasheet & Documents

Datasheets
IPU09N03LB G

Additional Information

Other Names
IPU09N03LBG
IPU09N03LB G-DG
IPU09N03LBGX
SP000209115
Standard Package
1,500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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